| PART |
Description |
Maker |
| AK1590 |
1GHz Delta-Sigma Fractional-N Frequency Synthesizer
|
Asahi Kasei Microsystems
|
| SA620DK SA620 |
Low voltage LNA mixer and VCO - 1GHz
Low voltage LNA, mixer and VCO - 1GHz
|
PHILIPS[Philips Semiconductors]
|
| FSAV430MTCX11 FSAV430QSCX11 FSAV43011 |
Low Voltage 1.1GHz, 4-Channel, 2:1 Video Switch
|
Fairchild Semiconductor
|
| SA631DK SA631 |
1GHz low voltage LNA and mixer
From old datasheet system
|
PHILIPS[Philips Semiconductors]
|
| SA601 |
Low voltage LNA and mixer - 1GHz
From old datasheet system
|
Philips
|
| SA8016WC SA8016 SA8016DH |
2.5GHz low voltage fractional-N synthesizer
|
PHILIPS[Philips Semiconductors]
|
| SA8026DH SA8026 |
2.5GHz low voltage fractional-N dual frequency synthesizer
|
PHILIPS[Philips Semiconductors]
|
| SA7026 SA7026DH |
1.3GHz low voltage fractional-N dual frequency synthesizer
|
NXP Semiconductors
|
| BF1005 Q62702-F1498 SIEMENSAG-Q62702-F1498 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| D2203 D2203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| EVAL-ADF4150HVEB1Z ADF4150HVBCPZ ADF4150HVBCPZ-RL7 |
High Voltage, Fractional-N
|
Analog Devices
|
